features l through hole package l 150 o c junction temperature l voltage and current are negative for pnp transistors mechanical data l case: to - 92, molded plastic l polarity: indicated as above. maximum ratings @ 25 o c unless otherwise specified charateristic symbol value unit collector-emitter voltage 2N6515 2n6519 2n6517, 2n6520 v ceo 250 300 350 v collector-base voltage 2N6515 2n6519 2n6517, 2n6520 v cbo 250 300 350 v emitter-base voltage 2N6515-6517 2n6519-6520 v ebo 6.0 5.0 v base current i b 250 ma collector current(dc) i c 500 ma power dissipation@ta=25 o c p d 625 5.0 w mw / o c power dissipation@tc=2 5 o c p d 1.5 12 w mw / o c thermal resistance, junction to ambient air 200 o c/w thermal resistance, junction to case 83.3 o c/w operating & storage temperature t j , t stg -55~150 o c npn 2N6515, 2n6517 pnp 2n6519, 2n6520 high voltage transistor 625mw pin configuration bottom view c b e inches mm dim min max min max note a .175 .185 4.45 4.70 b .175 .185 4.46 4.70 c .500 --- 12.7 --- d .016 .020 0.41 0.63 e .135 .145 3.43 3.68 g .095 .105 2.42 2.67 a e b c d g dimensions to-92 www. mccsemi .com r ja r jc
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www. mccsemi .com mcc collector cutoff current (v cb = 150 vdc, i e = 0) 2N6515 (v cb = 200 vdc, i e = 0) 2n6519 (v cb = 250 vdc, i e = 0) 2n6517, 2n6520 i cbo e e e 50 50 50 nadc emitter cutoff current (v eb = 5.0 vdc, i c = 0) 2N6515, 2n6517 (v eb = 4.0 vdc, i c = 0) 2n6519, 2n6520 i ebo e e 50 50 nadc on characteristics (1) dc current gain (i c = 1.0 madc, v ce = 10 vdc) 2N6515 2n6519 2n6517, 2n6520 (i c = 10 madc, v ce = 10 vdc) 2N6515 2n6519 2n6517, 2n6520 (i c = 30 madc, v ce = 10 vdc) 2N6515 2n6519 2n6517, 2n6520 (i c = 50 madc, v ce = 10 vdc) 2N6515 2n6519 2n6517, 2n6520 (i c = 100 madc, v ce = 10 vdc) 2N6515 2n6519 2n6517, 2n6520 h fe 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 e e e e e e 300 270 200 220 200 200 e e e e collector emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) e e e e 0.30 0.35 0.50 1.0 vdc base emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 20 madc, i b = 2.0 madc) (i c = 30 madc, i b = 3.0 madc) v be(sat) e e e 0.75 0.85 0.90 vdc baseemitter on voltage (i c = 100 madc, v ce = 10 vdc) v be(on) e 2.0 vdc electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) 2N6515 2n6519 2n6517, 2n6520 v (br)ceo 250 300 350 e e e vdc collectorbase breakdown voltage (i c = 100 m adc, i e = 0 ) 2N6515 2n6519 2n6517, 2n6520 v (br)cbo 250 300 350 e e e vdc emitterbase breakdown voltage (i e = 10 m adc, i c = 0) 2N6515, 2n6517 2n6519, 2n6520 v (br)ebo 6.0 5.0 e e vdc 1. pulse test: pulse width 300 s, duty cycle 2.0%. npn 2N6515 2n6517 pnp 2n6519 2n6520
www. mccsemi .com electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit smallsignal characteristics currentgain e bandwidth product (1) (i c = 10 madc, v ce = 20 vdc, f = 20 mhz) f t 40 200 mhz collectorbase capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c cb e 6.0 pf emitterbase capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) 2N6515, 2n6517 2n6519, 2n6520 c eb e e 80 100 pf switching characteristics turnon time (v cc = 100 vdc, v be(off) = 2.0 vdc, i c = 50 madc, i b1 = 10 madc) t on e 200 m s turnoff time (v cc = 100 vdc, i c = 50 madc, i b1 = i b2 = 10 madc) t off e 3.5 m s 1. pulse test: pulse width 300 s, duty cycle 2.0%. npn 2N6515 2n6517 pnp 2n6519 2n6520 mcc
www. mccsemi .com figure 1. dc current gain i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 h fe , dc current gain 200 100 20 30 50 70 v ce = 10 v t j = 125 c 25 c -55 c 2N6515 npn i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 h fe , dc current gain 200 100 20 30 50 70 v ce = -10 v t j = 125 c 25 c -55 c 2n6519 pnp figure 2. dc current gain i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 200 100 10 20 50 70 v ce = 10 v t j = 125 c 25 c -55 c 2n6517 i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 v ce = -10 v t j = 125 c 25 c -55 c 2n6520 figure 3. currentgain e bandwidth product i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 30 50 70 2N6515, 2n6517 i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 2n6519, 2n6520 f, current-gain bandwidth product (mhz) t f, current-gain bandwidth product (mhz) t h fe , dc current gain h fe , dc current gain 10 100 20 30 50 70 10 t j = 25 c v ce = 20 v f = 20 mhz t j = 25 c v ce = -20 v f = 20 mhz 30 200 100 10 20 50 70 30 npn 2N6515 2n6517 pnp 2n6519 2n6520 mcc
www. mccsemi .com figure 4. aono voltages i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 v, voltage (volts) 1.4 1.2 0 0.6 0.8 1.0 2N6515, 2n6517 npn i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 2n6519, 2n6520 pnp figure 5. temperature coefficients i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2.5 2N6515, 2n6517 i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 2n6519, 2n6520 figure 6. capacitance v r , reverse voltage (volts) 2000.2 0.5 1.0 2.0 5.0 10 20 50 100 100 2.0 3.0 5.0 70 2N6515, 2n6517 v r , reverse voltage (volts) 2n6519, 2n6520 c, capacitance (pf) 1.0 v, voltage (volts) 0.4 0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 -1.4 -1.2 0 -0.6 -0.8 -1.0 -0.4 -0.2 t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 5.0 r v , temperature coefficients (mv/ c) q r v , temperature coefficients (mv/ c) q 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 r q vc for v ce(sat) r q vb for v be 25 c to 125 c -55 c to 25 c -55 c to 125 c i c i b 10 r q vc for v ce(sat) r q vb for v be 25 c to 125 c -55 c to 25 c -55 c to 125 c i c i b 10 c, capacitance (pf) 7.0 10 20 30 50 -200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 t j = 25 c t j = 25 c c cb c eb c cb c eb 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 100 2.0 3.0 5.0 70 1.0 7.0 10 20 30 50 npn 2N6515 2n6517 pnp 2n6519 2n6520 mcc
www. mccsemi .com figure 7. turnon time i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 t, time (ns) 1.0k 20 10 2N6515, 2n6517 npn i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 2n6519, 2n6520 pnp figure 8. turnoff time i c , collector current (ma) 1001.0 2.0 3.0 5.0 7.0 10 20 30 50 70 2N6515, 2n6517 i c , collector current (ma) -100-1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 2n6519, 2n6520 30 50 70 100 200 300 500 700 t, time (ns) t d @ v be(off) = 2.0 v t r v ce(off) = 100 v i c /i b = 5.0 t j = 25 c t d @ v be(off) = 2.0 v t r v ce(off) = -100 v i c /i b = 5.0 t j = 25 c t, time (ns) 10k 100 200 300 500 700 1.0k 2.0k 3.0k 5.0k 7.0k 20 30 50 70 100 200 300 500 700 1.0k 2.0k v ce(off) = 100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c v ce(off) = -100 v i c /i b = 5.0 i b1 = i b2 t j = 25 c t s t f t s t f 1.0k 20 10 30 50 70 100 200 300 500 700 npn 2N6515 2n6517 pnp 2n6519 2n6520 mcc
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